Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures-Reference-Cited by-同舟云学术

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Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

Published:2003-05 Issue:5 Volume:32 Page:375-381
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Cheng Yung-Chen,Tseng Cheng-Hua,Hsu Chen,Ma Kung-Jen,Feng Shih-Wei,Lin En-Chiang,Yang C. C.,Chyi Jen-Inn

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0161-8.pdf

Reference21 articles.

1. M.S. Minsky, S. Chichibu, S.B. Fleischer, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, and S.P. DenBaar, Jpn. J. Appl. Phys. 37, L1362 (1998).

2. J. Dalfors, J.P. Bergman, P.O. Holtz, B.E. Sernelius, B. Monemar, H. Amano, and I. Akasaki, Appl. Phys. Lett. 74, 3299 (1999).

3. E. Oh, C. Sone, O. Nam, H. Park, and Y. Park, Appl. Phys. Lett. 76, 3242 (2000).

4. M.Y. Ryu, P.W. Yu, E.J. Shin, J.I. Lee, S.K. Yu, E. Oh, O.H. Nam, C.S. Sone, and Y.J. Park, J. Appl. Phys. 89, 634 (2001).

5. C.K. Choi, Y.H. Kwon, B.D. Little, G.H. Gainer, J.J. Song, Y.C. Chang, S. Keller, U.K. Mishra, and S.P. DenBaars, Phys. Rev. B 64, 245339–1 (2001).

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1. Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles;Applied Physics Letters;2022-11-21

2. Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells;Journal of Applied Physics;2020-01-14

3. Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage;Nanomaterials;2018-12-12

4. Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures;Chinese Optics Letters;2016

5. Damage-free Structural and Optical Characterization for InGaN/GaN Multi-Quantum Well Epi-Layers;Asian Journal of Chemistry;2013

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