Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1331077
Reference14 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
4. Luminescences from localized states in InGaN epilayers
5. Optical properties of Si-doped GaN
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2. Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells;ACS Photonics;2017-08-08
3. Influence of electron distribution on efficiency droop for GaN-based light emitting diodes;Journal of Solid State Lighting;2015-06-13
4. Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities;Japanese Journal of Applied Physics;2014-07-07
5. Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates;Japanese Journal of Applied Physics;2013-11-01
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