Time-resolved photoluminescence ofInxGa1−xN/GaNmultiple quantum well structures: Effect of Si doping in the barriers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245339/fulltext
Reference35 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Time‐resolved photoluminescence studies of InGaN epilayers
4. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
5. Localized exciton and its stimulated emission in surface mode from single-layerInxGa1−xN
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