Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s13391-013-2254-8.pdf
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1. Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate;Scientific Reports;2017-09-22
2. DEPOSITION AND CHARACTERIZATION OF MAGNETRON CO-SPUTTERED InAlN FILM AT DIFFERENT Ar:N2 GAS FLOW RATIOS;Surface Review and Letters;2017-03-30
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