Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

Published:2011-03-14 Issue:11 Volume:98 Page:113504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xue JunShuai,Hao Yue,Zhang JinCheng,Zhou XiaoWei,Liu ZiYang,Ma JunCai,Lin ZhiYu

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3567529

Reference14 articles.

1. High-power AlGaN/GaN HEMTs for Ka-band applications

2. Current instabilities in GaN-based devices

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

5. Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

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1. RF Performance Augmentation Using DG-InAlN/GaN HEMT;IEEE Transactions on Electron Devices;2024-09

2. Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire;Materials Science in Semiconductor Processing;2023-03

3. Effect of substrate and growth parameters on the InAlN barrier layer in InAlN/AlN/GaN HEMT structure grown by MOVPE;INTELLIGENT BIOTECHNOLOGIES OF NATURAL AND SYNTHETIC BIOLOGICALLY ACTIVE SUBSTANCES: XIV Narochanskie Readings;2023

4. A numerical study of the effect of pulse duration on preventing particle generation during the AlN pulsed MOCVD process;Materials Science in Semiconductor Processing;2022-09

5. 1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate;Applied Physics Letters;2021-10-11

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