Fabrication and characterization of In0.83Al0.17N based MSM visible photodiode
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2016160240/pdf
Reference36 articles.
1. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
2. Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering
3. III-nitride semiconductors for intersubband optoelectronics: a review
4. Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application
5. Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors
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