Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor-Reference-Cited by-同舟云学术

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Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor

Published:2018-06-20 Issue:6 Volume:14 Page:669-677
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Li Jun,Zhou You-Hang,Zhong De-Yao,Huang Chuan-Xin,Huang Jian,Zhang Jian-Hua

Funder

National Natural Science Foundation of China

Shanghai Science and Technology Commission

National Science Foundation for Distinguished Young Scholars of China

Science and Technology Commission of Shanghai Municipality Program

Shanghai Sailing Program

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s13391-018-0079-1/fulltext.html

Reference43 articles.

1. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488 (2004)

2. Ryu, M.K., Yang, S., Park, S.H.K., Hwang, C.S., Jeong, J.K.: Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors. Appl. Phys. Lett. 95, 173508 (2009)

3. Rim, Y.S., Ahn, B.D., Park, J.S., Kim, H.J.: Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature. J. Phys. D Appl. Phys. 47, 045502 (2014)

4. Sahoo, A.K., Wu, G.M.: Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors. Thin Solid Films 605, 129 (2016)

5. Lee, W.J., Chun, M.H., Cheong, K.S., Park, K.C., Park, C.O., Cao, G.: Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors. Solid State Phenom. 124, 247 (2007)

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