Affiliation:
1. Sejong University
2. Hanbar National University
3. KAIST - Korea Advanced Institute of Science and Technology
4. University of Washington
Abstract
SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical
and electrical properties were characterized for being applied as a gate insulator of low-temperature
polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating
exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with
increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface
roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor
deposition (PECVD) films.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference4 articles.
1. S. S. Kim, H. J. Kim, S. D. Lee: Display engineering I (in Korean) (Cheongbeom Press, Seoul, 2000), p.233.
2. M. Pessa, R. Makela and T. Suntola: Appl. Phys. Lett. 38 (1981), p.131.
3. T. Suntola: Thin Solid Films 225 (1993), p.96.
4. J. -H. Lee, U. -J. Kim, C. -H. Han, S. -K. Rha, W. -J. Lee and C. -O. Park: Jpn. J. Appl. Phys. 43 (2004) p. L328.
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