Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor-Reference-Cited by-同舟云学术

Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

Published:2019-08 Issue: Volume:485 Page:381-390
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nam Taewook^ORCID,Lee Hyunho,Choi Taejin,Seo Seunggi,Yoon Chang Mo,Choi Yunjung,Jeong Heonjong,Lingam Hima K.,Chitturi Venkateswara R.,Korolev Andrey,Ahn Jong-Hyun,Kim Hyungjun^ORCID

Funder

MOTIE/KEIT

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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5. Effects of defects in SiO2 thin films prepared on polyethylene terephthalate by high-temperature E-beam deposition;Han;Japanese J. Appl. Physics, Part 2 Lett.,2006

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