Heterogeneous Crystallinity of Atomic-Layer-Deposited Zinc Oxide Thin Film Using Resonance Raman Scattering Analysis-Reference-Cited by-同舟云学术

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Heterogeneous Crystallinity of Atomic-Layer-Deposited Zinc Oxide Thin Film Using Resonance Raman Scattering Analysis

Published:2021-04-19 Issue:4 Volume:17 Page:362-368
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Shim Ho Jae,Kim Jin Seok,Da Ahn Won,Choe Jin Hyun,Oh Donghyuk,Kim Kyung Soo,Lee Sung Chul,Pyo Sung Gyu

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s13391-021-00287-8.pdf

Reference35 articles.

1. Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.: Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition. Microelectron. Eng. 86, 1818 (2009)

2. Kinoshita, K., Tsunoda, K., Sato, Y., Noshiro, H., Yagaki, S., Aoki, M., Sugiyama, Y.: Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance. Appl. Phys. Lett. 93, 33506 (2008)

3. Thomasa R, Karana N K, Ehrhartb P, Waserb R and Katiyara R S 2007 Meeting Abstracts (The Electrochemical Society) p 1151

4. Krishnan, S., Stefanakos, E., Bhansali, S.: Effects of dielectric thickness and contact area on current–voltage characteristics of thin film metal–insulator–metal diodes. Thin Solid Films 516, 2244–2250 (2008)

5. Chen, M.-C., Chang, T.-C., Tsai, C.-T., Huang, S.-Y., Chen, S.-C., Hu, C.-W., Sze, S.M., Tsai, M.-J.: Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films. Appl. Phys. Lett. 96, 262110 (2010)

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