Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance-Reference-Cited by-同舟云学术

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Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Published:2008-07-21 Issue:3 Volume:93 Page:033506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kinoshita K.,Tsunoda K.,Sato Y.,Noshiro H.,Yagaki S.,Aoki M.,Sugiyama Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2959065

Reference9 articles.

1. Reproducible resistance switching in polycrystalline NiO films

2. Proceedings of IEEE Nonvolatile Memory Workshop;Kinoshita K.,2006

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