Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C-Reference-Cited by-同舟云学术

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Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C

Published:2016-03-07 Issue:4 Volume:122 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Liu Fangmei,Qian Chuan,Sun Jia,Liu Peng,Huang Yulan,Gao Yongli,Yang Junliang

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation of China

Program for New Century Excellent Talents in University (CN)

China Postdoctoral Science Foundation

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-016-9903-3.pdf

Reference26 articles.

1. H. Frenzel, A. Lajn, M. Grundmann, One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability. Phys. Status Solidi RRL 7(9), 605–615 (2013)

2. K. Kim, S. Park, J.B. Seon et al., Patterning of flexible transparent thin-film transistors with solution-processed ZnO using the binary solvent mixture. Adv. Funct. Mater. 21(18), 3546–3553 (2011)

3. K.K. Banger, R.L. Peterson, K. Mori et al., High performance, low temperature solution-processed barium and strontium doped oxide thin film transistors. Chem. Mater. 26(2), 1195–1203 (2014)

4. P.F. Carcia, R.S. McLean, M.H. Reilly et al., Transparent ZnO thin-film transistor fabricated by RF magnetron sputtering. Appl. Phys. Lett. 82(7), 1117–1119 (2003)

5. J. Sun, C. Qian, W. Huang, J. Yang, Y. Gao, Ion-dependent gate dielectric characteristics of ion-conducting SiO2 solid-electrolytes in oxide field-effect transistors. Phys. Chem. Chem. Phys. 16(16), 7455–7460 (2014)

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