One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability-Reference-Cited by-同舟云学术

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One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability

Published:2013-07-11 Issue:9 Volume:7 Page:605-615
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Frenzel Heiko,Lajn Alexander,Grundmann Marius

Funder

Deutsche Forschungsgemeinschaft within the framework of Sonderforschungsbereich 762 ‘Functionality of Oxide Interfaces’

Leipzig Graduate School of Natural Sciences ‘Building with Molecules and Nano-objects (BuildMoNa)’

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201307259/fullpdf

Reference87 articles.

1. Transparent semiconducting oxides: materials and devices

2. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

3. ZnO-based transparent thin-film transistors

4. High field-effect mobility zinc oxide thin film transistors produced at room temperature

5. Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics

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1. Unravelling the crossover amongst band and various hopping conduction mechanisms in Mo doped ZnO thin films owing to carrier localization at defects;Journal of Alloys and Compounds;2023-06

2. 2‐nm‐Thick Indium Oxide Featuring High Mobility;Advanced Materials Interfaces;2023-02-25

3. Robustness of Passivated ALD Zinc Tin Oxide TFTs to Aging and Bias Stress;IEEE Transactions on Electron Devices;2022-12

4. Near infrared photothermoelectric effect in transparent AZO/ITO/Ag/ITO thin films;Scientific Reports;2021-12

5. High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition;Advanced Electronic Materials;2020-06-11

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