Design of Si0.45Ge0.55-based core–shell-type dual-material dual-gate nanotube TFET with source pocket technique
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-021-04388-x.pdf
Reference23 articles.
1. S. Singh, A. Raman, Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance. IEEE Trans. Electron Devices (2018). https://doi.org/10.1109/TED.2018.2816898
2. Naveen Kumar and Ashish Raman, Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for ambipolar analysis. IEEE Trans. Electron Devices 66(3), 1468–1474 (2019)
3. N. Kumar, S. Umar Mushtaq, I. Amin, S. Anand, Design and performance analysis of dual-gate all around core-shell nanotube TFET. Superlattices Microstruct. (2018). https://doi.org/10.1016/j.spmi.2018.09.012
4. A.R. Sunny, K. Sarin, Analog and RF performance of doping-less tunnel FETs with Si0.55Ge0.45 source. J Comput Electron 15, 850–856 (2016). https://doi.org/10.1007/s10825-016-0859-5
5. S. Anand, S.I. Amin, R.K. Sarin, Analog performance investigation of dual electrode-based doping-less tunnel FET. J Comput Electron (2016). https://doi.org/10.1007/s10825-015-0771-4
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