Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02643-9.pdf
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