Design and Temperature Analysis of Si0.8Ge0.2-Based Extended Gate Gate-All-Around TFET
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2308-1_4
Reference15 articles.
1. Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34:52–59
2. Yu B, Chang L et al (2002) FinFET scaling to 10 nm gate length. In: Digest international electron devices meeting, pp 251–254. https://doi.org/10.1109/IEDM.2002.1175825
3. Kumar N, Mushtaq U, Amin SI, Anand S (2019) Design and performance analysis of dual-gate all around core-shell nanotube TFET. Superlattices Microstruct 125:356–364
4. Kumar MJ, Janardhanan S (2013) Doping-less tunnel field effect transistor: design and investigation. IEEE Trans Electron Devices 60:3285–3290
5. Luong GV, Narimani K et al (2016) Complementary strained Si GAA nanowire TFET inverter with suppressed ambipolarity. IEEE Electron Device Lett 37:950–953
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