Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor-Reference-Cited by-同舟云学术

Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor

Published:2023-07 Issue: Volume:137 Page:105826
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kumar Parveen^ORCID,Raj Balwinder

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Simulation of sub-0.1-mu m MOSFETs with completely suppressed short-channel effect;Tanaka;IEEE Electron. Device Lett.,1993

2. A guide to short-channel effects in MOSFETs;Duvvury;IEEE Circ. Dev. Mag.,1986

3. Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel;Bricout;IEEE Trans. Electron. Dev.,1996

4. Multi-gate MOSFET structures with high-k dielectric materials;Tripathi;J. Electron Devices,2012

5. Analysis of double gate dual material tunnel FET device for low power SRAM cell design;Kumar;Quantum Matter,2016

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