Achievement of polarity reversion from Al(Ga)-polar to N-polar for AlGaN film on AlN seeding layer grown by a novel flow‐modulation technology
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Published:2021-02-27
Issue:6
Volume:32
Page:7858-7866
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ISSN:0957-4522
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Container-title:Journal of Materials Science: Materials in Electronics
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language:en
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Short-container-title:J Mater Sci: Mater Electron
Author:
Zhang Jin, Zhang XiongORCID, Fan Aijie, Chen Shuai, He Jiaqi, Nasir Abbas, Zhuang Zhe, Lyu Jiadong, Hu Guohua, Cui Yiping
Funder
National Key Research and Development Program of China Fundamental Research Funds for Central Universities of the Central South University Natural Science Foundation of Jiangsu Province
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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