Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Author:
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated Gate Interface and Thermal Engineering;ECS Journal of Solid State Science and Technology;2022-06-01
2. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation;Semiconductor Science and Technology;2021-07-26
3. A Low Program Voltage Enabled Flash like AlGaN/GaN Stack Layered MIS-HEMTs Using Trap Assisted Technique;ECS Journal of Solid State Science and Technology;2021-05-01
4. Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering;Materials;2021-03-21
5. Achievement of polarity reversion from Al(Ga)-polar to N-polar for AlGaN film on AlN seeding layer grown by a novel flow‐modulation technology;Journal of Materials Science: Materials in Electronics;2021-02-27
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