Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms-Reference-Cited by-同舟云学术

Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms

Published:2007-12-05 Issue:6 Volume:19 Page:569-576
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Hasanuzzaman Mohammad,Haddara Yaser M.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-007-9391-5.pdf

Reference49 articles.

1. International Technology Roadmap for Semiconductors (2001) http://public.itrs.net , access date July 3, 2007

2. U. König, In: IEE colloquium on advances in semiconductor devices, p. 1 (1999)

3. G.D. Shen, J.X. Chen, D.S. Zou, G. Gao, C.X. Du, D.X. Xui, W.X. Ni, M. Willander, G.V. Hansoon, In: 4th International Conference on Solid-State and Integrated Circuit Technology, p. 439 (1995)

4. J.D. Cressler, D.L. Harame, J.H. Comfort, J.M.C. Stork, B.S. Meyerson, T.E. Tice, in IEEE International Solid-State Circuits Conference, p. 24 (1994)

5. C.C. Wang, Y.M. Sheu, S. Liu, R. Duffy, A. Heringa, N.E.B. Cowern, P.B. Griffin, Mat. Sci. Eng. B 124–125, 39 (2005)

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacancy mediated diffusion time in two dimensional ordered binary alloy. Six-jump cycle model;Physica A: Statistical Mechanics and its Applications;2018-11

2. SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation;Journal of Applied Physics;2017-08-14

3. Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing;Materials Science in Semiconductor Processing;2016-06

4. Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap;Journal of Applied Physics;2012-09

5. Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation;Journal of Applied Physics;2011-05-15