Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3581113
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1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
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4. High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces
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