Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Author:

Xia Guangrui (Maggie)

Funder

Natural Science and Engineering Research Council of Canada

Crosslight Software Inc.

Lumerical Inc.

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference126 articles.

1. Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors;Xia;J Appl Phys,2007

2. Enhanced Ge-Si interdiffusion in high phosphorus-doped germanium on silicon;Cai;Semicond Sci Technol,2015

3. Åberg I, Ni Chleirigh C, Hoyt JL. Thermal processing and mobility in strained heterostructures on insulator. in Proc. ECS: Adv Gate Stack, Source/Drain Channel Eng. Si-Based CMOS: New Mater., Processes, Equip., 2005. PV2005-05: pp. 505–514.

4. Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si n-channel MOSFETs;Xia;IEEE Trans Electron Dev,2004

5. Study of Si-Ge interdiffusion with phosphorus doping;Cai;J Appl Phys,2016

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