Study of Si-Ge interdiffusion with phosphorus doping-Reference-Cited by-同舟云学术

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Study of Si-Ge interdiffusion with phosphorus doping

Published:2016-10-28 Issue:16 Volume:120 Page:165108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cai Feiyang¹,Anjum Dalaver H.²,Zhang Xixiang³^ORCID,Xia Guangrui (Maggie)¹

Affiliation:

1. Department of Materials Engineering, University of British Columbia, Vancouver, British Columbia V6T1Z4, Canada

2. Imaging and Characterization Core Lab, King Abdullah University of Science and Technology, Thuwal 23955‐6900, Saudi Arabia

3. Materials Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955‐6900, Saudi Arabia

Funder

Crosslight Software Inc.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966570

Reference30 articles.

1. Ge-on-Si laser operating at room temperature

2. An electrically pumped germanium laser

3. Electrically pumped lasing from Ge Fabry-Perot resonators on Si

4. Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization

5. Waveguide photodetectors for the near-infrared in polycrystalline Germanium on silicon

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;Scientific Reports;2024-04-04

2. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;2024-01-16

3. Phosphorus diffusion and deactivation during SiGe oxidation;Journal of Applied Physics;2023-04-03

4. Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD;Optical Materials Express;2019-12-02

5. Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries;Science Bulletin;2019-10

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