Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD-Reference-Cited by-同舟云学术

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Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Published:2019-12-02 Issue:1 Volume:10 Page:1
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Zhou Guangnan^ORCID,Cuervo Covian Alejandra V.,Lee Kwang Hong^ORCID,Han Han,Tan Chuan Seng,Liu Jifeng,Xia Guangrui (Maggie)

Funder

Natural Sciences and Engineering Research Council of Canada

National Research Foundation Singapore

National Science Foundation

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. High-performance Ge-on-Si photodetectors

2. Optical modulator on silicon employing germanium quantum wells

3. Hybrid Integrated Platforms for Silicon Photonics

4. Recent progress in lasers on silicon

5. High‐temperature operation of strained Si0.65Ge0.35/Si(111)p‐type multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam epitaxy

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1. Low‐Temperature Synthesis of Stable CaZn₂P₂ Zintl Phosphide Thin Films as Candidate Top Absorbers;Advanced Energy Materials;2024-09

2. Structural and optical properties of Cu implanted Ge thin films;Physica B: Condensed Matter;2024-02

3. Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method;ACS Omega;2023-12-12

4. Lindemann’s Role of Melting, Debye Temperature, Dimensionless Mass and Bond Energies for Si-based Tetrahedral Compound Semiconductors;Silicon;2023-09-02

5. Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth;Optics Express;2021-01-19

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