Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth
Author:
Funder
Singapore-MIT Alliance for Research and Technology Centre
National Research Foundation Singapore
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference49 articles.
1. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
2. 36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
3. High-performance Ge-on-Si photodetectors
4. High-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm
5. 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate
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