High‐temperature operation of strained Si0.65Ge0.35/Si(111)p‐type multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109860
Reference16 articles.
1. Electroluminescence from a pseudomorphic Si0.8Ge0.2alloy
2. Systematic blue shift of exciton luminescence in strained Si1 −s xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxy
3. Room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells
4. Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
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