Room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106734
Reference17 articles.
1. Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon
2. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
3. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
4. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
5. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
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