Design considerations of biaxially tensile-strained germanium-on-silicon lasers-Reference-Cited by-同舟云学术

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Design considerations of biaxially tensile-strained germanium-on-silicon lasers

Published:2016-04-28 Issue:6 Volume:31 Page:065015
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Li Xiyue,Li Zhiqiang,Li Simon,Chrostowski Lukas,Xia Guangrui (Maggie)

Funder

Crosslight Software Inc.

Oversea Study Program of Guangzhou Elite Project

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065015/pdf

Reference44 articles.

1. Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

2. Optical modulator on silicon employing germanium quantum wells

3. Visible light emission due to quantum size effects in highly porous crystalline silicon

4. The structural and luminescence properties of porous silicon

5. Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method;ACS Omega;2023-12-12

2. Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers;Physica Scripta;2023-08-03

3. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In_xAl_1–xAs Stressors;ACS Omega;2022-02-08

4. PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor;Photonics Research;2021-06-21

5. Light-Emission from Ion-Implanted Group-IV Nanostructures;Topics in Applied Physics;2021

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