Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si-Reference-Cited by-同舟云学术

Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

Published:1995-08-15 Issue:7 Volume:52 Page:4910-4925
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schuppler S.,Friedman S. L.,Marcus M. A.,Adler D. L.,Xie Y.-H.,Ross F. M.,Chabal Y. J.,Harris T. D.,Brus L. E.,Brown W. L.,Chaban E. E.,Szajowski P. F.,Christman S. B.,Citrin P. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.4910/fulltext

Reference91 articles.

1. Temperature dependence of the radiative recombination coefficient in silicon

2. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys

3. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy

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