A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor
Author:
Affiliation:
1. School of Electrical and Control Engineering, Xi’an University of Science and Technology, Xi’an, 710054, China
2. Key Laboratory of Wide Bandgap Semiconductors, School of Microelectronics, Xidian University, Xi’an, 710071, China
Abstract
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Interdiffusion in group IV semiconductor material systems: Applications, research methods and discoveries;Xia;Science Bulletin,2019
2. Non-silicon microelectronics: Germanium and germanium-tin field-effect transistors;Hao;SCIENTIA SINICA Physica, Mechanica & Astronomica,2016
3. Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration;Yang;IEEE Transactions on Electron Devices,2013
4. Germanium PMOSFETs with Low-temperature Si2H6 passivation featuring high hole mobility and superior negative bias temperature instability;Wang;Chinese Physics Letters,2014
5. Possibility of increased mobility in Ge-Sn alloy system;Sau;Physical Review B,2007
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