Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration-Reference-Cited by-同舟云学术

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Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

Published:2013-12 Issue:12 Volume:60 Page:4048-4056
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Yue,Han Genquan,Guo Pengfei,Wang Wei,Gong Xiao,Wang Lanxiang,Low Kain Lu,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6665013/06656859.pdf?arnumber=6656859

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker;IEEE Transactions on Nanotechnology;2024

2. Isothermal Heteroepitaxy of Ge_1–xSn_x Structures for Electronic and Photonic Applications;ACS Applied Electronic Materials;2023-04-03

3. Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications;Advanced Electronic Materials;2022-12-04

4. A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor;Journal of Nanoelectronics and Optoelectronics;2022-09-01

5. Photoelectron spectroscopy study of GeSn epitaxial layers for photonic applications;Microelectronic Engineering;2022-01

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