Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications-Reference-Cited by-同舟云学术

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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Published:2022-12-04 Issue:2 Volume:9 Page:2201015
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Woo Gunhoo¹,Kim Taesung¹²,Yoo Hocheon³^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology Sungkyunkwan University (SKKU) Suwon Gyeonggi‐do 16419 Korea

2. School of Mechanical Engineering Sungkyunkwan University Suwon Gyeonggi‐do 16419 Korea

3. Department of Electronic Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202201015

Reference157 articles.

1. Sub-10 nm two-dimensional transistors: Theory and experiment

2. The International Technology Roadmap for Semiconductors—Perspectives and challenges for the next 15 years

3. Transistor scaling with novel materials

4. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

5. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

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1. Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe₂/2H-MoS₂ Heterostructure;Nano Letters;2024-09-13

2. Two-Dimensional GeS/SnSe₂ Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity;ACS Applied Materials & Interfaces;2024-06-22

3. Gate-controlled spin filter, spin valve, and negative differential resistance in cold metal/bipolar magnetic semiconductor lateral homologous heterojunctions;Physical Review B;2024-02-26

4. Heterostructure of Reduced Titanium Dioxide Nanorods and Small Molecules Leads to Photo‐Induced Negative Differential Resistance Behaviors;Advanced Optical Materials;2024-02-21

5. Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures;Nano Letters;2024-02-16

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