Author:
Cressler J.D.,Harame D.L.,Comfort J.H.,Stork J.M.C.,Meyerson B.S.,Tice T.E.
Cited by
9 articles.
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1. Modeling germanium diffusion in Si1−xGex/Si superlattice structures;Journal of Applied Physics;2009-02-15
2. Overview;Fabrication of SiGe HBT BiCMOS Technology;2007-12-13
3. Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms;Journal of Materials Science: Materials in Electronics;2007-12-05
4. Overview;Silicon Heterostructure Handbook;2005-11
5. Semiconductors, Elemental-Material Properties;digital Encyclopedia of Applied Physics;2003-04-15