1. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Recent advances in micro-pixel light emitting diode technology
2. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscop..
3. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by..
4. Isamu,Akasaki 日本 Meijo University 2014诺贝尔物理学奖 Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple ..
5. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Localization and transient emission properties in InGaN/GaN quantum wells of different polarities wi..
6. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applica..
7. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE
8. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
9. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semi..
10. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 III-nitride core-shell nanorod array on quartz substrates
11. Hiroshi,Amano 日本 Nagoya University 2014诺贝尔物理学奖;2016美国工程院院士 Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of In..
12. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Origin of electrons emitted into vacuum from InGaN light emitting diodes
13. Shuji,Nakamura 美国 University of California-Santa Barbara 2003美国工程院院士;2014诺贝尔物理学奖 Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes..
14. 杨德仁 中国 浙江大学 教授 中国科学院院士 Efficient and High-Radiance Silicon-Based Perovskite Light-Emitting Diodes through Phase Segregation..
15. 罗毅 中国 清华大学 教授 2021中国工程院院士 Low temperature epitaxial technology for GaN-based materials
16. Jagadish , Chennupati 澳大利亚 Australian National University 2020美国工程院院士;中国科学院外籍院士 Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameter..
17. Arakawa ,Yasuhiko 日本 University of Tokyo 2017美国工程院院士 Single photon generation from AlGaN exciton localization centers exhibiting narrow spectral linewidt..
18. 罗毅 中国 清华大学 教授 2021中国工程院院士 Color-Tunable 3D InGaN/GaN Multi-Quantum-Well Light-Emitting-Diode Based on Microfacet Emission and ..
19. Karen K,Gleason 美国 Massachusetts Institute of Technology, MIT 2015美国工程院院士 Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
20. 张荣 中国 厦门大学 2023中国科学院院士 High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si*