Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications-Reference-Cited by-同舟云学术

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

Published:2018-07-19 Issue:21 Volume:215 Page:1800361
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Robin Yoann¹^ORCID,Liao Yaqiang²,Pristovsek Markus¹,Amano Hiroshi¹

Affiliation:

1. Institute of Materials and Systems for Sustainability (IMaSS)Nagoya UniversityAKASAKI Research Center, Room 201 C3‐1, Furo‐cho, Chikusa‐kuNagoya 464‐8603Japan

2. Department of Electrical Engineering and Computer ScienceNagoya UniversityFuro‐cho, Chikusa‐ku, Nagoya‐shiNagoya 464‐8603Japan

Funder

Japan Science and Technology Agency

Strategic International Collaborative Research Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800361

Reference34 articles.

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5. Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

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