Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-mass Separated Ion Beam Deposition Method-Reference-Cited by-同舟云学术

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Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-mass Separated Ion Beam Deposition Method

Published:2002 Issue:3 Volume:43 Page:478-481
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Lim Jae-Won¹,Ishikawa Yukio²,Miyake Kiyoshi³,Yamashita Mutsuo⁴,Isshiki Minoru¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

2. Department of Substrate Engineering Semiconductor Division, Sumitomo Electric Industries Ltd.

3. Graduate School of Science and Engineering, Saitama University

4. Seinan Industries Co. Ltd.

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/43/3/43_3_478/_pdf

Reference20 articles.

1. 1) S. P. Murarka, R. J. Gutmann, A. E. Kaloeros and W. A. Lanford: Thin Solid Films 236 (1993) 257–266.

2. 2) M. Bakli, L. Baud, H. M’Saad, D. Pique and P. Rabinzohn: Microelectronic Engineering 33 (1997) 175–188.

3. 3) C. Rye, K. W. Kwon, A. L. S. Loke, H. B. Lee, T. Nogami, V. M. Dubin, R. A. Kavari, G. W. Ray and S. S. Wong: IEEE Transactions on Electron Devices 46 (1999) 1113–1120.

4. 4) Chin-An Chang: J. Vac. Sci. Technol. A 8 (1990) 3796–3802.

5. 5) E. Kolawa, J. S. Chen, J. S. Reid, P. J. Pokela and M.-A. Nicolet: J. Appl. Phys. 70 (3) (1991) 1369–1373.

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