Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO<SUB>2</SUB> Gate Dielectric-Reference-Cited by-同舟云学术

Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO₂ Gate Dielectric

Published:2011 Issue:1 Volume:52 Page:118-123
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Chandra S. V. Jagadeesh¹,Jeong Myung-Il¹,Park Yun-Chang²,Yoon Jong-Won³,Choi Chel-Jong¹⁴

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University

2. Measurement and Analysis Division, National Nanofab Center (NNFC)

3. Department of Advanced Materials Science and Engineering, Dankook University

4. Department of BIN Fusion Technology, Chonbuk National University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/52/1/52_M2010324/_pdf

Reference32 articles.

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