Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth-Reference-Cited by-同舟云学术

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Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth

Published:2009 Issue:5 Volume:50 Page:1085-1090
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Sugiyama Masakazu¹,Shioda Tomonari²,Tomita Yuki²,Yamamoto Takahisa³,Ikuhara Yuichi¹,Nakano Yoshiaki⁴

Affiliation:

1. Institute of Engineering Innovation, School of Engineering, the University of Tokyo

2. Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo

3. Department of Advance Materials Science, School of Frontier Sciences, the University of Tokyo

4. Research Center for Advanced Science and Technology, the University of Tokyo

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/50/5/50_MC200830/_pdf

Reference12 articles.

1. 1) X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars and J. S. Speck: Appl. Phys. Lett. 72 (1998) 692.

2. 2) H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma and C. Hamphreys: J. Crystal Growth 231 (2001) 466.

3. 3) A. M. Yong, C. B. Soh, X. H. Zhang, S. Y. Chow and S. J. Chua: Thin Solid Films 515 (2007) 4496.

4. 4) I. Lo, K. Y. Hsieh, S. L. Hwang, L. W. Tu, W. C. Mitchel and A. W. Saxler: Appl. Phys. Lett. 74 (1999) 2167.

5. 5) J. Bai, T. Wang, Y. Izumi and S. Sakai: J. Crystal Growth 223 (2001) 61.

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1. Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE);Journal of Alloys and Compounds;2022-11

2. Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy;Optics Express;2021-07-06

3. Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods;Optical Materials Express;2017-01-05

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