Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
3. The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy
4. Determination of photoluminescence mechanism in InGaN quantum wells
5. Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD
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