The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Published:1998-06 Issue: Volume:189-190 Page:24-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kawaguchi Yasutoshi,Shimizu Masaya,Yamaguchi Masahito,Hiramatsu Kazumasa,Sawaki Nobuhiko,Taki Wataru,Tsuda Hidetaka,Kuwano Noriyuki,Oki Kensuke,Zheleva Tsvetanka,Davis Robert F

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

4. The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

5. Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

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