Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. (Part 1) 34 (1995) L797.
2. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
3. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
4. Low pressure MOVPE of GaN and heterostructures
5. Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature
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