Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls-Reference-Cited by-同舟云学术

Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

Published:2016-01-25 Issue:4 Volume:108 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mancini L.¹^ORCID,Hernández-Maldonado D.¹²,Lefebvre W.¹,Houard J.¹,Blum I.¹,Vurpillot F.¹,Eymery J.³^ORCID,Durand C.³,Tchernycheva M.⁴,Rigutti L.¹

Affiliation:

1. Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray, France

2. SuperSTEM STFC Daresbury Laboratories, Warrington WA4 4AD, United Kingdom

3. CEA, CNRS, Université Grenoble Alpes, 38000 Grenoble, France

4. Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Saclay, 91405 Orsay, France

Funder

Association Instituts Carnot (Instituts Carnot)

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4940748

Reference56 articles.

1. Advances in group III-nitride-based deep UV light-emitting diode technology

2. Correlation between In content and emission wavelength of InxGa1−xN/GaN nanowire heterostructures

3. Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

4. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

5. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

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