Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes-Reference-Cited by-同舟云学术

Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

Published:2016-11-30 Issue:5 Volume:214 Page:1600782
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhou Shengjun¹²,Liu Xingtong¹

Affiliation:

1. School of Power and Mechanical Engineering; Wuhan University; Wuhan 430072 P.R. China

2. School of Mechanical Engineering; Shanghai Jiao Tong University; Shanghai 200240 P.R. China

Funder

National Natural Science Foundation of China

National High-tech R&D Program of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600782/fullpdf

Reference42 articles.

1. The efficiency challenge of nitride light-emitting diodes for lighting

2. Lighting the 21st century

3. Cathodoluminescence of GaN nanorods and nanowires grown by thermal evaporation

4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

5. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

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