Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer-Reference-Cited by-同舟云学术

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Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

Published:2015-11 Issue: Volume:355 Page:1013-1019
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhou Shengjun,Yuan Shu,Liu Yingce,Guo L. Jay,Liu Sheng,Ding Han

Funder

National High-tech R&D Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

4. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

5. Design of a novel freeform lens for LED uniform illumination and conformal phosphor coating

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1. Study on the polishing performance and mechanism of sapphire wafers by different types of degradable surfactants;Surfaces and Interfaces;2024-09

2. Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability;IEEE Transactions on Electron Devices;2024-08

3. Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure;ECS Journal of Solid State Science and Technology;2023-09-01

4. Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook;Science China Chemistry;2023-09-01

5. Effect of target on micromachining of sapphire using laser-induced plasma-assisted ablation;Ceramics International;2023-05

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