A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on () sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
3. Localized exciton and its stimulated emission in surface mode from single-layerInxGa1−xN
4. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
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1. The development and applications of nanoporous gallium nitride in optoelectronics: a review;Semiconductor Science and Technology;2023-05-25
2. Defect analysis of the LED structure deposited on the sapphire substrate;Journal of Crystal Growth;2018-04
3. Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth;MATERIALS TRANSACTIONS;2009
4. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells;Journal of Crystal Growth;2005-05
5. Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers;Acta Physica Polonica A;2005-01
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