Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

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Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells

Published:2005-05 Issue:1-2 Volume:279 Page:55-64
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Meng-Ku,Cheng Yung-Chen,Chen Jiun-Yang,Wu Cheng-Ming,Yang C.C.,Ma Kung-Jen,Yang Jer-Ren,Rosenauer Andreas

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

2. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

3. Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

4. Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

5. Optical properties of doped InGaN/GaN multiquantum-well structures

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarisation fields in III-nitrides: effects and control;Materials Science and Technology;2016-03-10

2. Doping effects in p- and n-type layers of 390-nm InGaN DQW lasers;International Journal of Modern Physics B;2015-07-13

3. Study on The Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures;Asia Communications and Photonics Conference 2014;2014

4. High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence;Chinese Physics Letters;2013-07

5. Optical properties of InN grown on templates with controlled surface polarities;physica status solidi (a);2010-07-09

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