High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence-Reference-Cited by-同舟云学术

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High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Published:2013-07 Issue:7 Volume:30 Page:078502
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wang Wen-Jie,Chen Peng,Yu Zhi-Guo,Liu Bin,Xie Zi-Li,Xiu Xiang-Qian,Wu Zhen-Long,Xu Feng,Xu Zhou,Hua Xue-Mei,Zhao Hong,Han Ping,Shi Yi,Zhang Rong,Zheng You-Dou

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/7/078502/pdf

Reference18 articles.

1. The Blue Laser Diode

2. Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

3. Enhanced performance of an InGaN–GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

4. Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells

5. Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The morphologies and optical properties of three-dimensional GaN nano-cone arrays;RSC Advances;2016

2. Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes;Chinese Physics B;2015-02-26

3. Characteristics of nanoporous InGaN/GaN multiple quantum wells;Superlattices and Microstructures;2014-07

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