Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes-Reference-Cited by-同舟云学术

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Published:2015-02-26 Issue:3 Volume:24 Page:038503
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Liu Ming-Gang,Wang Yun-Qian,Yang Yi-Bin,Lin Xiu-Qi,Xiang Peng,Chen Wei-Jie,Han Xiao-Biao,Zang Wen-Jie,Liao Qiang,Lin Jia-Li,Luo Hui,Wu Zhi-Sheng,Liu Yang,Zhang Bai-Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/24/3/038503/pdf

Reference43 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

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3. The investigation of LED degradation model based on the chemical kinetics

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