High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates-Reference-Cited by-同舟云学术

High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

Published:2018 Issue:7 Volume:6 Page:1642-1650
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Wenliang¹²³⁴⁵,Lin Yunhao¹²³⁴,Li Yuan¹²³⁴,Li Xiaochan¹²³⁴,Huang Liegen¹²³⁴,Zheng Yulin¹²³⁴,Lin Zhiting¹²³⁴,Wang Haiyan¹²³⁴,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510641

4. China

5. Guangdong Choicore Optoelectronics Co., Ltd

Abstract

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al_0.24Ga_0.76N buffer layers and a three-dimensional (3D) GaN layer.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04478J

Reference39 articles.

1. Two-dimensional gallium nitride realized via graphene encapsulation

2. Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates

3. Template Approach to Crystalline GaN Nanosheets

4. GaN-based light-emitting diodes on various substrates: a critical review

5. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

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