Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118767
Reference12 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition
4. High pressure cell for magneto-optical experiments
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